陳敬教授團隊成功製造首個GaN/SiC混合場效應電晶體
由電子及計算機工程學系講座教授陳敬領導的研究團隊成功製造了首個氮化鎵（GaN）和碳化矽（SiC）混合場效應電晶體（HyFET）。此項極具開拓性的研究最近獲電機電子工程師學會（IEEE）的旗艦出版物《IEEE Spectrum》雜誌報導，題為「Is This Hybrid Tech the Future of Power Electronics?」。
在去年12月於美國三藩市舉行的IEEE國際電子器件會議（IEDM）上，他們以論文「HyFET—A GaN/SiC Hybrid Field-Effect Transistor」展示了這一成果。
根據論文所述，他們實驗性地實現了一種新型功率電子器件，即世界上首個GaN/SiC混合場效應電晶體。該器件充分利用GaN橫向結構和SiC縱向器件的互補優勢，有效地繞開了它們各自的缺點。該實驗揭示了這種新的功率器件平台可以最大限度地集成GaN和SiC這兩種主流的寬禁帶半導體。
論文連結：https://ieeexplore.ieee.org/document/10413796
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