陈敬教授团队成功制造首个GaN/SiC混合场效应晶体管
由电子及计算机工程学系讲座教授陈敬领导的研究团队成功制造了首个氮化镓（GaN）和碳化硅（SiC）混合场效应晶体管（HyFET）。此项极具开拓性的研究最近获电气电子工程师学会（IEEE）的旗舰出版物《IEEE Spectrum》杂志报道，题为「Is This Hybrid Tech the Future of Power Electronics? 」。
在去年12月于美国三藩市举行的IEEE国际电子器件会议（IEDM）上，他们以论文「HyFET—A GaN/SiC Hybrid Field-Effect Transistor」展示了这一成果。
根据论文所述，他们实验性地实现了一种新型功率电子器件，即世界上首个GaN/SiC混合场效应晶体管。该器件充分利用GaN横向结构和SiC纵向器件的互补优势，有效地绕开了它们各自的缺点。该实验揭示了这种新的功率器件平台可以最大限度地集成GaN和SiC这两种主流的宽带隙半导体。
论文链接：https://ieeexplore.ieee.org/document/10413796
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